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 Spec and character of SE cell&Module by China Sunergy Nächstes Thema anzeigen
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Autor
thomasliu98
Öfters hier
Öfters hier



Angemeldet: 07.08.2006
Beiträge: 25

BeitragVerfasst am: 10.03.2008, 20:48 Nach oben

Structure characteristics of SE cell
1.The emitter area of a solar cell requires a shallow junction, a light phosphorous diffusion. Not only reduces the effect of dead layers but also improves the quantum efficiency and the short-circuit current.

2.The metal contact of emitting area requires a deep junction and heavy phosphorous diffusion to ensure the low contact resistance and to prevent penetration to result high short current.
3. To ensure high cell performance in separate areas for absorption and for metal contact, SE solar cells adopt different diffusion conditions in the different areas.

Advantages of SE cell

1、Fraunhofer Institute test results of monocrystalline 125mm SE cells made by China Sunergy.

Nr. Isc Uoc Pmpp FF Efficiency
S125-1# 5.2895 0.62904 2.61631 78.631 0.17582
S125-2# 5.24877 0.62857 2.59813 78.75 0.17455
High conversion efficiency. 17%~18% conversion efficiency (the average efficiency is 17.5%), is much higher than the standard P-Type cells.

2、Uniform cell performance with stable processing control;
3、Low cell performance mismatch during encapsulation, the modules made from SE cells have demonstrated high power output which is very close to the power from the cells before encapsulation. The SE cells (17.25%) had been encapsulated into 181W module in Germany. Recently, the modules encapsulated with higher property SE cells (17.75%) have achieved 188W.

4、Excellent performance under low lighting conditions, SE cells give very low reverse current. The single-crystalline 125mm SE cells made on the high property wafer have only 20~30mA reverse current under the 12v voltage reverse bias. Even on some poorer materials, the reverse current were only 100~200mA, which were10 times lower than the standard P-Type cells.

5、Image
Image
Low hot spot effect, due to low reverse current density.
6 Low degradation under light exposure. The output power degradation will be less than 1.5% after 4-hour light exposure through our preliminary test; which was much lower than the P-Type cell.
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